1 four igbtmod? u-series module 50 amperes/1200 volts cm50bu-24h powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 outline drawing and circuit diagram 1 dimensions inches millimeters a 2.83 72.0 b 3.58 91.0 c 1.16 +0.04/-0.02 29.5 +1.0/-0.5 d 2.170.01 55.00.25 e 2.910.01 74.00.25 f 0. 16 4.0 g 1.02 26.0 h 0. 31 8.1 j 0. 79 20.0 k 0. 39 10.0 l 0. 43 11.0 dimensions inches millimeters m 0.74 18.7 n 0. 75 19.1 p 0.57 14.4 q 1.55 39.3 r 0. 05 1.25 s m4 m4 t 0.22 dia. 5.5 dia. u 1.61 41.0 v 0. 69 17.5 w 0. 02 0.5 x 0.110 2.79 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of four igbt transistors in an h-bridge con?guration, with each transistor having a reverse-con - nected super-fast recovery free- wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simpli?ed system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery (70ns) free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies laser power supplies ordering information: example: select the complete module number you desire from the table - i.e. cm50bu-24h is a 1200v (v ces ), 50 ampere four- igbt igbtmod? power module. current rating v ces type amperes volts (x 50) cm 50 24 g v p u g u p e u p s - nuts (4 typ) v g u n e u n e v p t - (4 typ.) e u n n g u n u e u p e v n g v n v e v p g u p p g v p g v n e v n typ typ w - thick x x - wide tab (8 places) d j a c h g f typ k n e b l k q r m l r u p v l n l p n p
2 cm50bu-24h four igbtmod? u-series module 50 amperes/1200 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, o *?v l? ml *)q5 q? junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25c) i c 50 amperes peak collector current (t j 150c) i cm 100* amperes emitter current** (t c = 25c) i e 50 amperes peak emitter current** i em 100* amperes maximum collector dissipation (t c = 25c) p c 400 watts mounting torque, m4 main terminal C 15 in-lb mounting torque, m5 mounting C 31 in-lb weight C 390 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, o *?v *vv ml o*?? ? o q? collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v C C 0.5 a gate-emitter threshold voltage v ge(th) i c = 5.0ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 50a, v ge = 15v, t j = 25c C 2.9 3.7 volts i c = 50a, v ge = 15v, t j = 125c C 2.85 C volts total gate charge q g v cc = 600v, i c = 50a, v ge = 15v C 187 C nc emitter-collector voltage* v ec i e = 50a, v ge = 0v C C 3.2 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. dynamic electrical characteristics, o *?v *vv ml o*?? ? o q? input capacitance c ies C C 7.5 nf output capacitance c oes v ce = 10v, v ge = 0v C C 2.6 nf reverse transfer capacitance c res C C 1.5 nf resistive turn-on delay time t d(on) v cc = 600v, i c = 50a, C C 80 ns load rise time t r v ge1 = v ge2 = 15v, C C 200 ns switch turn-off delay time t d(off) r g = 6.3 , resistive C C 150 ns times fall time t f load switching operation C C 350 ns diode reverse recovery time t rr i e = 50a, di e /dt = -100a/ s C C 300 ns diode reverse recovery charge q rr i e = 50a, di e /dt = -100a/ s C 0.28 C c thermal and mechanical characteristics, o *?v *vv ml o*?? ? o q? thermal resistance, junction to case r th(j-c) q per igbt 1/4 module C C 0.31 c/w thermal resistance, junction to case r th(j-c) d per fwdi 1/4 module C C 0.7 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C 0.1 C c/w 2
3 cm50bu-24h four igbtmod? u-series module 50 amperes/1200 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 3 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 5 0 100 16 12 8 4 0 150 250 200 v cc = 600v v cc = 400v i c = 50a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -100a/ sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 2 10 1 10 0 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 6.3 ? t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) collector-emitter voltage, v ce , (volts) capacitance, c ie s , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 1 10 0 10 -1 10 -2 v ge = 0v f = 1mhz 10 1 c ie s c oes c re s 1.0 1.5 2.0 2.5 3.5 3.0 4.0 10 0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) t j = 25 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat ) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 2 0 8 6 4 2 0 t j = 25 c i c = 25a i c = 100a i c = 50a collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 0 20 40 60 8 0 4 3 2 1 0 100 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 0 4 8 12 16 2 0 80 60 40 20 0 v ce = 10v t j = 25 c t j = 125 c 100 collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 1 0 60 20 0 v ge = 20v 15 12 11 8 t j = 25 o c 40 80 100 10 9
4 cm50bu-24h four igbtmod? u-series module 50 amperes/1200 volts powerex, inc., 200 hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 4 time, (s ) normalized transient thermal impedance, z th( j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th( j-c ) = 0.31 c/w z th = r th ? (normalized value) 10 -1 10 -2 10 -3 time, (s ) normalized transient thermal impedance, z th( j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 single pulse t c = 25 c per unit base = r th( j-c ) = 0.7 c/w z th = r th ? (normalized value)
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